DS1230Y-100

DS1230Y-100

Product Details:

  • Usage Memory storage in industrial and computing systems
  • Features Nonvolatile, data retention for 10 years, drop-in replacement for standard SRAMs
  • Operating Temperature 0C to +70C
  • Output Data bus output
  • Interface Parallel
  • Power Source Internal lithium cell
  • Components Integrated lithium cell, SRAM, controller circuitry
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DS1230Y-100 Price And Quantity

  • 150 INR
  • 10 Piece

DS1230Y-100 Product Specifications

  • 32-pin DIP (Dual In-line Package)
  • 0C to +70C
  • 4.5V to 5.5V
  • No external battery required
  • Integrated lithium cell, SRAM, controller circuitry
  • 256k (32k x 8) Nonvolatile SRAM
  • Address and data bus
  • Approx. 2.1g
  • 70mA (active) / 2mA (standby)
  • Nonvolatile SRAM IC
  • 41.9mm x 13.8mm x 8.5mm (approx.)
  • Data bus output
  • Memory storage in industrial and computing systems
  • Data retention, embedded systems, industrial automation
  • Black
  • 5V
  • Internal lithium cell
  • Nonvolatile SRAM (NV SRAM)
  • Parallel
  • Nonvolatile, data retention for 10 years, drop-in replacement for standard SRAMs

Product Description

Specification

Access Time

150ns

Mounting Type

Through Hole

Technology

NVSRAM (Non-Volatile SRAM)

Write Cycle Time Word Page

150ns

Voltage Supply

4.5 V ~ 5.5 V

Supplier Device Package

28-EDIP

Part Status

Active

Packaging

Tube

Package Case

28-DIP Module (0.600",15.24mm)

Operating Temperature

0 deg C ~ 70 deg C (TA)

Memory Type

Non-Volatile

Memory Size

256Kb (32K x 8)

Memory Interface

Parallel

Memory Format

NVSRAM

Base Part Number

DS1230Y




Reliable Memory Storage for Industrial Systems

The DS1230Y-100 NV SRAM is specifically tailored for critical memory storage in industrial automation and embedded computing. Its robust data retention capabilities and unlimited write cycles make it suitable for applications where reliability is paramount. The integrated lithium cell, combined with advanced controller circuitry, ensures secure, nonvolatile storage without the need for external power sources.


Drop-In Replacement and Easy Integration

Thanks to its 32-pin DIP (through-hole) package and parallel interface, the DS1230Y-100 can seamlessly replace standard SRAM modules in existing designs. This compatibility simplifies integration, making upgrades and system maintenance straightforward, while maintaining compliance with stringent industry standards, including RoHS.

FAQs of DS1230Y-100:


Q: How is the DS1230Y-100 used in embedded systems?

A: The DS1230Y-100 serves as a nonvolatile memory solution in embedded systems, retaining data for at least 10 years without requiring an external power source. Its parallel interface allows quick integration where SRAM functionality and long-term data preservation are critical.

Q: What benefits does the DS1230Y-100 offer over traditional SRAM devices?

A: Unlike standard SRAM, the DS1230Y-100 retains data even during power loss, eliminating the need for backup batteries or periodic data refresh. Its integrated lithium cell and unlimited write cycle endurance ensure reliable, maintenance-free operation.

Q: When should I choose the DS1230Y-100 for my application?

A: Choose the DS1230Y-100 when you need fast, nonvolatile memory with a minimum 10-year data retention for industrial automation, computing, or embedded systems, especially where data persistence and reliability are essential.

Q: Where can the DS1230Y-100 be installed?

A: The DS1230Y-100 is designed for through-hole installation in standard 32-pin DIP sockets, making it ideal for both new designs and as a drop-in replacement in legacy systems across industrial and computing environments.

Q: What is the process for integrating the DS1230Y-100 into a system?

A: Integration involves placing the DS1230Y-100 into a compatible 32-pin DIP socket and connecting it to the address and data bus. No additional circuitry or external batteries are needed, thanks to its internal lithium cell.

Q: How does the DS1230Y-100 achieve data retention without an external battery?

A: The DS1230Y-100 contains an integrated lithium cell and control circuitry, which automatically preserves SRAM contents when external power is disconnected, allowing for at least 10 years of reliable data storage.

Q: What kind of systems commonly benefit from the DS1230Y-100?

A: Industrial control systems, embedded automation platforms, and data logging devices benefit from the DS1230Y-100 due to its nonvolatile operation, rapid access times, and long-term reliability without external maintenance.

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